Return to KLUBNL.PL main page
| To: | [email protected] |
|---|---|
| Subject: | Re: LF: Re: Re: FET RDS |
| From: | John Rabson <[email protected]> |
| Date: | Fri, 14 Jan 2011 14:45:21 +0100 |
| In-reply-to: | <[email protected]> |
| References: | <003801cbb33e$8b59e620$0401a8c0@xphd97xgq27nyf> <D9D2BC233E6248D095857032DE0B8974@JimPC> <004001cbb349$8b4ec190$0401a8c0@xphd97xgq27nyf> <[email protected]> <002d01cbb3d3$ded8e9a0$0401a8c0@xphd97xgq27nyf> <[email protected]> |
| Reply-to: | [email protected] |
| Sender: | [email protected] |
Thank you for all that, Andy. May I suggest another thing we might look at? If we could measure the temperature of the FET case, perhaps we could deduce the dissipation, and therefore get a lower bound for the losses. Now where did I put those temperature-sensing ICs? John F5VLF/G3PAI |
| <Prev in Thread] | Current Thread | [Next in Thread> |
|---|---|---|
| ||
| Previous by Date: | LF: 137.7, mal hamilton |
|---|---|
| Next by Date: | LF: 137.7, mal hamilton |
| Previous by Thread: | Re: LF: Re: Re: FET RDS, Andy Talbot |
| Next by Thread: | Re: LF: Re: FET RDS, Andy Talbot |
| Indexes: | [Date] [Thread] [Top] [All Lists] |