To: | <[email protected]> |
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Subject: | Re: LF: FET RDS |
From: | Minto Witteveen <[email protected]> |
Date: | Thu, 13 Jan 2011 19:08:34 +0100 |
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Mal,Yes, putting several in parallel means that the total capacitance that the driver stage sees (sum of gate capacitances and the reverse transfer capacitances) increases so more power is needed to hard-switch the fets. I use a TIP31/32 totem-pole to accomplish this. And the capacitance becomes quit big, Ciss = 4200 pF, Crss= 135 pF (translates roughly to approx 135 * 20 = 2700 pF) so total capacitance the driver sees is somewhere near 14 nF!! Cx @ 500 KHz = 22.7 Ohms. The IRFP360 is even worse. Now image 4 of these in parallel. Regards, Minto pa3bca. -------------------------------------------------- From: "mal hamilton" <[email protected]> Sent: Thursday, January 13, 2011 18:50 To: <[email protected]> Subject: Re: LF: FET RDS Minto One approach is to use a few in parallel like they do in plasma tv's but there must then be other considerations to hinder the application. mal/g3kev ----- Original Message ----- From: "Minto Witteveen" <[email protected]> To: <[email protected]> Sent: Thursday, January 13, 2011 5:42 PM Subject: Re: LF: FET RDSYup that is correct. High(er) voltage fets usually have the higher RDS-on values... Tradeoff based on physics... I started my 500-600 Watts 500 KHz transverter with two IRFP360's in parallel. Later I switched to IXFH26N50 (cheaper at EUR 1 a piece and slightlybetterthan the IRFP360).The IXFH26N50 has a VDSS of 500 Volts, and a RDS-on of 0.23 Ohms and an Idof 25A. With two of these in parallel the efficiency is > 90%. DC supply is (max)54Volts. Peak voltage on the drains is somewhere around max 250 Volts. So I might search for Fets with a somewhat lower RDSon and a lower max voltage, but these fets are indestructible in my setup, they survive open and short-circuited antennas without a problem for several minutes until heat becomes a problem. For more info wrt my setup see www.pa3bca.nl Regards, Minto pa3bca (500 KHz in PA idle at the moment, alas...) From: mal hamilton Sent: Thursday, January 13, 2011 17:25 To: rsgb Subject: LF: FET RDS LF/MF It seems to me if you are working with low V high current FETS the RDSseemsreasonable 0.02 for example but when a High V low current device is needtheRDS of these devices seem to be around 0.4 considerably higher. therefore the efficiency of the amplifier will never reach the 90% plusthatsome claim. I stripped a plasma tv recently and found banks of FETS (6 per bank) and wondered why the application neederd so many and have come to theconclusionthat because of the high RDS lots were required in parallel to reduce the losses. Maybe there are low RDS fets about that will handle several hundred voltsatmodest currents ie 10A at 1000 volts Room for thought de mal/g3kev |
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