Return to KLUBNL.PL main page
| To: | <[email protected]> |
|---|---|
| Subject: | LF: Re: FET RDS |
| From: | "James Moritz" <[email protected]> |
| Date: | Thu, 13 Jan 2011 17:31:32 -0000 |
| Dkim-signature: | v=1; a=rsa-sha256; c=relaxed/relaxed; d=btopenworld.com; s=s1024; t=1294939907; bh=cvVYlCXuZPHbZZN6SppM8iszBmAX3O829ZmTLO1V5FQ=; h=Received:X-Yahoo-SMTP:X-YMail-OSG:X-Yahoo-Newman-Property:Message-ID:From:To:References:In-Reply-To:Subject:Date:MIME-Version:Content-Type:Content-Transfer-Encoding:X-Priority:X-MSMail-Priority:X-Mailer:X-MimeOLE; b=DMEOXAgXBHR9tgpe50wiDWArYv+rYP9/ZNgwZfO9nAoZa+ECyzu5Z1y6a0oU63KQc8RYLq+Sq9AstdqF1BVQkkHFnUCny5tWmtMIL36L9NzIqEPPNYRsl2ZFn1AOZ0mG31comGdpfMPdiSdswU7zngB/0WpiL1Wfk/S9lGlUJoo= |
| Domainkey-signature: | a=rsa-sha1; q=dns; c=nofws; s=s1024; d=btopenworld.com; h=DKIM-Signature:Received:X-Yahoo-SMTP:X-YMail-OSG:X-Yahoo-Newman-Property:Message-ID:From:To:References:In-Reply-To:Subject:Date:MIME-Version:Content-Type:Content-Transfer-Encoding:X-Priority:X-MSMail-Priority:X-Mailer:X-MimeOLE; b=6xB8t/ZjLevDX+GXBPr1ukG7+aw8+8/4dVdK+bLLfQBbI4zYSupbrtNC9TaWMLMBDGGzYoaPABQqNJYDePZWiyj6XXme5OefqLg4pKsRBOzWLoe8VhGvM3QyKqBwFs2VjA1zWn/bMQtjrla2vn6bJ1XXG73B3qcr/Ty9eBbBaf0= ; |
| Domainkey-status: | good (testing) |
| In-reply-to: | <003801cbb33e$8b59e620$0401a8c0@xphd97xgq27nyf> |
| References: | <003801cbb33e$8b59e620$0401a8c0@xphd97xgq27nyf> |
| Reply-to: | [email protected] |
| Sender: | [email protected] |
Dear Mal, Andy, LF Group,There is a trade-off in construction of MOSFETs - basically, for a given area of silicon, higher BVdss requires a thicker active region of the MOSFET with higher on resistance. You can reduce Rdson by using a greater chip area, but that means higher capacitances, increased cost, etc. So you can't have your cake and eat it. In Andy's breadboard circuit, there is a mismatch between the available MOSFET type and the available PSU voltage - the 500V BVdss is a bit too high for a 60V DC supply - the peak voltage in an ideal class E is 3.56 x Vdc, perhaps you would allow 5 x Vdc for safety. 300V BVdss mosfets seem a bit thin on the ground, so more efficient schemes might be to increase Vdc to about 100V, or reduce it to about 40V and use lower Rdson 200V mosfets. Cheers, Jim Moritz 73 de M0BMU |
| <Prev in Thread] | Current Thread | [Next in Thread> |
|---|---|---|
| ||
| Previous by Date: | LF: FET RDS, mal hamilton |
|---|---|
| Next by Date: | LF: Re: Recycling components, Martin Evans |
| Previous by Thread: | LF: FET RDS, mal hamilton |
| Next by Thread: | LF: Re: Re: FET RDS, mal hamilton |
| Indexes: | [Date] [Thread] [Top] [All Lists] |