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LF: FET RDS

To: "rsgb" <[email protected]>
Subject: LF: FET RDS
From: "mal hamilton" <[email protected]>
Date: Thu, 13 Jan 2011 16:25:51 -0000
Reply-to: [email protected]
Sender: [email protected]
LF/MF
It seems to me if you are working with low V high current FETS the RDS seems reasonable 0.02 for example but when a High V low current device is need the RDS of these devices seem to be around 0.4 considerably higher.
therefore the efficiency of the amplifier will never reach the 90% plus that some claim.
I stripped a plasma tv recently and found banks of FETS (6 per bank) and wondered why the application neederd so many and have come to the conclusion that because of the high RDS lots were required in parallel to reduce the losses.
Maybe there are low RDS fets about that will handle several hundred volts at modest currents ie 10A at 1000 volts
Room for thought
 
de mal/g3kev
 
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