To: | [email protected] |
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Subject: | Re: Re[2]: LF: Protecting a MOSFET driver chip from MOSFET failure? |
From: | Andy Talbot <[email protected]> |
Date: | Mon, 10 Aug 2015 17:50:11 +0100 |
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There is Miller feedback present, where the drain change of voltage is fed back to the gate via internal capacitiance. The effect is to magnify the Cdg value by the voltage gain, so its bound to give something. Also the Cgs - which fo rlot voltage high current FETs is huge, varies with Vds, so all sorts of things ae happening. And bearing in mind a FET under switching in in a very non-linear region, its just not going to be worth trying to understand / explain every blip in the waveform Raab, in his varius discussion od Class-E at HF using low cost mosfets, in fact suggests sinewave drive. the theory being that the removal of hard edges lowers teh drive requirment anyway, and the actual switching of a class-E transmitter, since it occurs at zero drain volts, doesn't have to be hard switched. Not sure how well that argument applies to class D push pull though. I think for any QRO LF transmitter these days I'd always go the Class-E route now. http://www.g4jnt.com/QRO_500kHz_PA_Breadboard.pdf They're more difficult to set up in the first place, and narrow band, but they are simpler and more efficient when finished, and have a substatial part of the low pass filtering already present in the tank circuitry Andy G4JNT On 10 August 2015 at 17:35, Michael Probert <[email protected]> wrote: Hello Andy and Chris, |
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