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Total 3 documents matching your query.

1. Re: LF: Re: FET RDS (score: 1): Author: Andy Talbot <[email protected]>; Date: Thu, 13 Jan 2011 17:50:03 +0000; Yes. The breadboard is complete. I've been able to test it up to 60V on the supply rail and up there can get around 460 Watts. But the voltage drop acrosss the FETs is quite significant. 250 Vo; /rsgb_lf_group-archives/html/rsgb_lf_group/2011-01/msg00025.html (13,960 bytes)
2. LF: Re: FET RDS (score: 1): Author: "James Moritz" <[email protected]>; Date: Fri, 14 Jan 2011 01:52:02 +0100; Dear Chris, Stefan, LF Group, The high current ranges on DMMs often have considerably poorer accuracy than the DC volts ranges. Another source of power measurement error is the dummy load; both its a; /rsgb_lf_group-archives/html/rsgb_lf_group/2011-01/msg00401.html (12,222 bytes)
3. LF: Re: FET RDS (score: 1): Author: "James Moritz" <[email protected]>; Date: Thu, 13 Jan 2011 18:33:37 +0100; Dear Mal, Andy, LF Group, There is a trade-off in construction of MOSFETs - basically, for a given area of silicon, higher BVdss requires a thicker active region of the MOSFET with higher on resistan; /rsgb_lf_group-archives/html/rsgb_lf_group/2011-01/msg01165.html (11,250 bytes)

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