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Re: LF: Field effect versus bipolar transistors

To: [email protected]
Subject: Re: LF: Field effect versus bipolar transistors
From: "James Moritz" <[email protected]>
Date: Tue, 29 May 2001 11:59:40 +0000
In-reply-to: <001001c0e821$a6c3f9c0$a1d51ad4@w8k3f0>
Organization: University of Hertfordshire
Reply-to: [email protected]
Sender: <[email protected]>
Dear Dick, LF group,

Not too sure about linear amplifiers, but FETs are certainly better for the switching - type LF PAs that are currently popular. The reason for this is similar to those given for the use of MOSFETs in switching power supplies, which have much in common. These are: -Switching speed an order of magnitude greater, giving lower switching losses -The base current drive waveform must be carefully controlled for optimum performance from bipolars, while MOSFETs only require an "on-off" square wave from a low impedance source. -MOSFETs do not suffer from "secondary breakdown" phenomena, which means that the transient voltages and currents in a bipolar PA need to be more carefully controlled to prevent failure due to the formation of hot spots within the transistor. This makes MOSFETs more robust against spikey switching waveforms.

The situation seems more complicated with "linear" amplifier designs. Significant problems arise because a linear amplifier inherently dissipates power, wheras most modern power MOSFETs are designed to operate as high efficiency switches with low power dissipation. This results in devices with high current and voltage ratings being produced in small packages, which are unable to dissipate the heat produced in a linear application, and so must be operated at much below their ratings. This in turn produces problems with biasing - a much-vaunted advantage of MOSFETs is the negative temperature coefficient of the drain current vs. gate bias voltage characteristic; the current falls as the device gets hotter, so supposedly ensuring stable biasing, easy parallel operation etc, etc. In fact, this only applies when the device is operating relatively close to it's maximum current; when used at lower currents, as you are forced to do by the power dissipation issue, the tempco is in fact positive, and thermal runaway can occur as with bipolars. The Mosfets designed for audio PAs are much better in this respect, but cost more, and are only available in relatively low ratings.

Also, there seems to be a dearth of reasonably high frequency, high power, low cost bipolar devices, whilst MOSFETs get cheaper all the time, and are inherently fast enough without needing to go to expensive, specialised RF devices

I think the main problem with MOSFET PAs at the moment is that not all design issues have been addressed properly yet. For example, the transformer push-pull linear and class D designs are prone to produce big voltage spikes, which mean death for any PA device. The Decca circuit and derrivatives demonstrate that robust and reliable designs can be achieved, however.

Cheers, Jim Moritz
73 de M0BMU


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