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LF: Re: Class E amp

To: [email protected]
Subject: LF: Re: Class E amp
From: "Alan Melia" <[email protected]>
Date: Sat, 21 May 2005 15:05:27 +0100
Delivery-date: Sat, 21 May 2005 15:05:59 +0100
Envelope-to: [email protected]
References: <[email protected]>
Reply-to: [email protected]
Sender: [email protected]
Hi Mal, the values in the spreadsheet have been tested by simulation in
Simetrix and by practical builds by Joe VO1NA and Mike GW4HXO, also Finbar
EI0CF (and I think a few others). It looks as though there may be a "typo"
in the Tonne site (as "m" is next to "n" on the keyboard....mF would be
milliFarad really !! despite the old English usage as mF to mean microfarad
and mmF for "puffs").

I have only considered single ended configurations for simplicity (and I
hoped, to curb the FET-popping which seemed a feature of the p-p designs).
Fritz Raab in his book details p-p designs and other configurations or
tuning which give the same conditions. The only problem is that I suppose
you could say Class-E is a "narrow-band design"

Cheers de Alan G3NYK

----- Original Message -----
From: "hamilton mal" <[email protected]>
To: <[email protected]>
Sent: 21 May 2005 11:26
Subject: LF: Class E amp


Hi All
The info for class E design in the G3NYK cct specifies C values in nF
whereas in the Tonne design info it specifies the values in mF.
I used the same paramaters as G3NYK used in his design data in the Tonne
computer design prog and came up with the same figures but this time the C
is in mF and not nF.
Have I got something wrong or is there a mistake somewhere else, all those
mf values seem very high in the Tonne design.
73 de Mal/G3KEV





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