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1. LF: Re: RE: BYX10 as LF PIN diode (score: 1): Author: "Vernall" <[email protected]>; Date: Wed, 23 Nov 2005 09:39:49 +1300; Hi all, Thanks to Jim M0BMU, Alan G3NYK and Mike G8YMB for comments. I agree that incidental use of a diode for other than its intended purpose needs care with verification of the desired incidental; /rsgb_lf_group-archives/html/rsgb_lf_group/2005-11/msg00058.html (10,252 bytes)
2. LF: Re: RE: BYX10 as LF PIN diode (score: 1): Author: "Alan Melia" <[email protected]>; Date: Tue, 22 Nov 2005 17:14:17 +0100; Hi all Jim has a fair point about this. The structure of an HV diode is designed to make the depletion layer move far into the bulk material reducing the voltage gradient mV/um to keep it below the i; /rsgb_lf_group-archives/html/rsgb_lf_group/2005-11/msg00060.html (12,104 bytes)

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