To: | "LF-Group" <[email protected]> |
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Subject: | LF: FETs failing |
From: | "Alan Melia" <[email protected]> |
Date: | Mon, 28 Oct 2002 13:09:46 -0000 |
Reply-to: | [email protected] |
Sender: | <[email protected]> |
Hi All, Jim has raised an interesting point about low current testing which probably applies to BJT RF devices as well in some cases. A lot of these devices consist of several small fets (or smaller BJTs) in parallel on the chip. It is possible to have some of these go open (BJTs suffer breaks in their emitter metallisation due to electro-migration of the contact metal) Breaks in source, or emitter, paralleling track on the chip could mean that the unit could look ok at low currents, but be overloaded when run at full blast. Cheers de Alan G3NYK [email protected] |
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