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References: [ +subject:/^(?:^\s*(re|sv|fwd|fw)[\[\]\d]*[:>-]+\s*)*LF\:\s+Field\s+effect\s+versus\s+bipolar\s+transistors\s*$/: 4 ]

Total 4 documents matching your query.

1. Re: LF: Field effect versus bipolar transistors (score: 1): Author: "Hans-Joachim Brandt" <[email protected]>; Date: Wed, 30 May 2001 23:54:09 +0200; Dear all, as Dick, PA0SE, when raising his question, has mentioned my bipolar PA in the latest version of the LF Experimenter's Handbook using complementary darlington-pairs and that the emitter arro; /rsgb_lf_group-archives/html/rsgb_lf_group/2001-05/msg00007.html (14,186 bytes)
2. Re: LF: Field effect versus bipolar transistors (score: 1): Author: "James Moritz" <[email protected]>; Date: Tue, 29 May 2001 11:59:40 +0000; Dear Dick, LF group, Not too sure about linear amplifiers, but FETs are certainly better for the switching - type LF PAs that are currently popular. The reason for this is similar to those given for; /rsgb_lf_group-archives/html/rsgb_lf_group/2001-05/msg00041.html (11,809 bytes)
3. Re: LF: Field effect versus bipolar transistors (score: 1): Author: "Rik Strobbe" <[email protected]>; Date: Tue, 29 May 2001 11:18:33; Hello Dick, The power FET's that are used in LF-Pa's are less vulnerable than most bipolar power transistors. These FET's are designed for switched power supplies and can withstand quite a lot of mis; /rsgb_lf_group-archives/html/rsgb_lf_group/2001-05/msg00043.html (11,665 bytes)
4. LF: Field effect versus bipolar transistors (score: 1): Author: "Dick Rollema" <[email protected]>; Date: Tue, 29 May 2001 11:27:09 +0200; To All from PA0SE Most of the designs for high power transmitters for the LF bands I have seen use power-FETs in the final. Examples are the designs by G0MRF and G3YXM in The low frequency experiment; /rsgb_lf_group-archives/html/rsgb_lf_group/2001-05/msg00045.html (9,872 bytes)

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