Return-Path: X-Spam-DCC: paranoid 1481; Body=2 Fuz1=2 Fuz2=2 X-Spam-Checker-Version: SpamAssassin 3.1.3 (2006-06-01) on lipkowski.org X-Spam-Level: X-Spam-Status: No, score=-2.4 required=5.0 tests=BAYES_00,DNS_FROM_AHBL_RHSBL, HTML_MESSAGE,SPF_PASS autolearn=no version=3.1.3 Received: from post.thorcom.com (post.thorcom.com [195.171.43.25]) by paranoid.lipkowski.org (8.13.7/8.13.7) with ESMTP id uAPECKs5029377 for ; Fri, 25 Nov 2016 15:12:20 +0100 Received: from majordom by post.thorcom.com with local (Exim 4.14) id 1cAHBf-0001Ln-4F for rs_out_1@blacksheep.org; Fri, 25 Nov 2016 14:09:11 +0000 Received: from [195.171.43.32] (helo=relay1.thorcom.net) by post.thorcom.com with esmtp (Exim 4.14) id 1cAHBe-0001Ld-Pb for rsgb_lf_group@blacksheep.org; Fri, 25 Nov 2016 14:09:10 +0000 Received: from mail-wm0-x234.google.com ([2a00:1450:400c:c09::234]) by relay1.thorcom.net with esmtps (TLSv1.2:ECDHE-RSA-AES256-GCM-SHA384:256) (Exim 4.87) (envelope-from ) id 1cAHBU-0003wI-QU for rsgb_lf_group@blacksheep.org; Fri, 25 Nov 2016 14:09:09 +0000 Received: by mail-wm0-x234.google.com with SMTP id t79so92797028wmt.0 for ; Fri, 25 Nov 2016 06:09:00 -0800 (PST) X-DKIM-Result: Domain=gmail.com Result=Good and Known Domain DKIM-Signature: v=1; a=rsa-sha256; c=relaxed/relaxed; d=gmail.com; s=20120113; h=mime-version:in-reply-to:references:from:date:message-id:subject:to; bh=NSr6I8RKSNBrFuMNrQhcTmMnB7kTw5esQzjyk1AdJRA=; b=NQmuEmFxDdX7l8t1zVqNS9vFgrD/6y7xQwl0FTvAxMojfQ1kAhO3y+DaafxzDXFTjz DaXw6VxxsAiIrdZTvvKDlIptdRNfPMhK5viMvyIgJ5oZntL8SSzMXm7zbApdWCd0KqTJ Ysbe3yLfa/RLVtUad4u6KOfOp8uEXYfcoQ7roKDF2+4juL00dmlLZ4yJ87oNukqnhufL riXhs5vuCLeNyNJxnrMvTO0YkwelUQM4ZQ5gdeL3O2wSIPyD202C5GlwfsxOxnwlqTbB mSMLi0v4C2ONTkliiKCatyFeJk9zz4c6XGnCrpkHgwdJ3XZtNaz0zVKZVHQ9ixalbvDf 8n5A== X-Google-DKIM-Signature: v=1; a=rsa-sha256; c=relaxed/relaxed; d=1e100.net; s=20130820; h=x-gm-message-state:mime-version:in-reply-to:references:from:date :message-id:subject:to; bh=NSr6I8RKSNBrFuMNrQhcTmMnB7kTw5esQzjyk1AdJRA=; b=Y8okM87C1iPZ4cXOVMgFr7dVJJEZ9tddHzjvA0Tmx9X24nJT6YdrrXinQruTrBEveR Om+k0F40mN+SDCP/w786XL2CiAkSoxXNqZjis72ooT9H47D5ZZAWNMLw23Yo0dembr81 xGBieR9wngVri2gq1MvWcTuacKO/sLEZd+jRTvigLon8SVb2IELgRMJbCJoAXoIystvD Qj2IuCDEA1bW1XjJ8OV1+6cRC8eZaHOUTR1EnWS7NqjnKOl8AzLz1sZriPHnOcqqFGcT PZG3YWOotN49bvAdhCuCGfeMDSHNg+kB1pdn20yiF/0ywaboTRu2hTXxBj+DPWuWkPgL b8QQ== X-Gm-Message-State: AKaTC02J/68RtGU/oNKg6QGNL7kOv+V5j1mjClX+J5SwFA+VkgE3uVB47OMtcgvYV4LA+XzerD4ioZhp4s7cQw== X-Received: by 10.28.69.91 with SMTP id s88mr7716751wma.18.1480082938030; Fri, 25 Nov 2016 06:08:58 -0800 (PST) MIME-Version: 1.0 Received: by 10.28.91.1 with HTTP; Fri, 25 Nov 2016 06:08:57 -0800 (PST) In-Reply-To: <635074543.20161125135600@chriswilson.tv> References: <635074543.20161125135600@chriswilson.tv> From: Andy Talbot Date: Fri, 25 Nov 2016 14:08:57 +0000 Message-ID: To: rsgb_lf_group@blacksheep.org X-Scan-Signature: f3d1da032404cd5ad9531631c09e3b44 Subject: Re: LF: H Bridge power MOSFET based amps question Content-Type: multipart/alternative; boundary=94eb2c0723a6c26f52054220a9a4 X-SA-Exim-Scanned: Yes Sender: owner-rsgb_lf_group@blacksheep.org Precedence: bulk Reply-To: rsgb_lf_group@blacksheep.org X-Listname: rsgb_lf_group X-SA-Exim-Rcpt-To: rs_out_1@blacksheep.org X-SA-Exim-Scanned: No; SAEximRunCond expanded to false X-Scanned-By: MIMEDefang 2.56 on 10.1.3.11 Content-Length: 4703 Status: O X-Status: X-Keywords: X-UID: 9542 --94eb2c0723a6c26f52054220a9a4 Content-Type: text/plain; charset=UTF-8 Quite simple. Same number of FETs for given power, you either parallel them in half-bridge, or use singly in H bridge But H-bridge give you four times the impedance, and high Z is always good news, easier to work with, even if it does mean a higher value L in the tank. My 320V (DC) design, of course, had a high load resistance to start with at that voltage, so half-bridge was quite adequate. Still working fine after nearly 20 years http://www.g4jnt.com/137tx.pdf Andy G4JNT On 25 November 2016 at 13:56, Chris Wilson wrote: > 25 November 2016 > > > I have built a 1kW Class D amp for none linear digital transmissions > around 136kHz. > > My Dave Pick designed amp uses four MOSFETS, two in parallel each side > driven by a dedicated driver chip. I see the odd LF amp design using > what's described as a H Bridge MOSFET array. The one I most recall > most, by Andy Talbot used rectified 240 volt single phase mains to run > it. My question is why use an H Bridge rather than paralleling more > MOSFETS in what to me is a more conventional format? Does it overcome > voltage or current limitations? Is it due to adding more capacitance > with paralleled devices? Or does it allow a linear amp to be built? > > I realize a meaningful reply might be quite lengthy, so I assure you I > have Googled it, but most stuff related to in the articles is > industrial motor control. > > Secondly, in a Class D none linear amp, how is the gate resistor value > chosen, and is there ever a case for not using one at all? > > Thirdly, am I alone in thinking the terms Drain and Source seem back > to front and the names would intuitively be reversed so a Drain was > called a Source and vice versa? :) > > Thanks. 2E0ILY > > > > -- > > > Best regards, > Chris 2E0ILY mailto:chris@chriswilson.tv > > > > --94eb2c0723a6c26f52054220a9a4 Content-Type: text/html; charset=UTF-8 Content-Transfer-Encoding: quoted-printable
Quite simple. =C2=A0 =C2=A0Same number of FETs for given p= ower, you either parallel them in half-bridge, =C2=A0or use singly in H bri= dge

But H-bridge give you four times the impedance, and = high Z is always good news, easier to work with, even if it does mean a hig= her value L in the tank.

My 320V (DC) design, of c= ourse, had a high load resistance to start with at that voltage, so half-br= idge was quite adequate. =C2=A0 Still working fine after nearly 20 years=C2= =A0http://www.g4jnt.com/137tx.pd= f

Andy =C2=A0G4JNT

On 25 November 2016 at 13:56, Chr= is Wilson <chris@chriswilson.tv> wrote:
25 November 2016


I have built a 1kW Class D amp for none linear digital transmissions
around 136kHz.

My Dave Pick designed amp uses four MOSFETS, two in parallel each side
driven by a dedicated driver chip. I see the odd LF amp design using
what's described as a H Bridge MOSFET array. The one I most recall
most, by Andy Talbot used rectified 240 volt single phase mains to run
it. My question is why use an H Bridge rather than paralleling more
MOSFETS in what to me is a more conventional format? Does it overcome
voltage or current limitations? Is it due to adding more capacitance
with paralleled devices? Or does it allow a linear amp to be built?

I realize a meaningful reply might be quite lengthy, so I assure you I
have Googled it, but most stuff related to in the articles is
industrial motor control.

Secondly, in a Class D none linear amp, how is the gate resistor value
chosen, and is there ever a case for not using one at all?

Thirdly, am I alone in thinking the terms Drain and Source seem back
to front and the names would intuitively be reversed so a Drain was
called a Source and vice versa? :)

Thanks. 2E0ILY



--


Best regards,
=C2=A0Chris=C2=A0 2E0ILY=C2=A0 =C2=A0 =C2=A0 =C2=A0 =C2=A0 =C2=A0 =C2=A0 = =C2=A0 =C2=A0 =C2=A0 =C2=A0 =C2=A0 =C2=A0 =C2=A0mailto:chris@chriswilson.tv




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