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Message-ID: <008101cbd2ca$dafdbd40$4001a8c0@lark>
From: "Alan Melia" <alan.melia@btinternet.com>
To: <rsgb_lf_group@blacksheep.org>
References: <788033577-1298396905-cardhu_decombobulator_blackberry.rim.net-1949347720-@bda644.bisx.prod.on.blackberry> <4D63FF65.2030204@iup.uni-heidelberg.de>
Date: Tue, 22 Feb 2011 19:52:38 -0000
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Subject: Re: LF: Title: Power MOSFET Knock Efficiency Up A Notch
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Why stick to 12v ?? Best efficiency will always be at higher supply vo=
ltages
....also more tractable output impedances.
Alan G3NYK
----- Original Message -----=20
From: "Stefan Sch=E4fer" <schaefer@iup.uni-heidelberg.de>
To: <rsgb_lf_group@blacksheep.org>
Sent: Tuesday, February 22, 2011 6:24 PM
Subject: Re: LF: Title: Power MOSFET Knock Efficiency Up A Notch


> These FETs can be used as a very low-loss electronic switch in 12V
> circuits but are not suitable for a easy PA design (running at 12VDC=
).
> Maybe they are difficult to get. An alternative which is easy to get=
 and
> is most suitable for a high power class E PA at 12 VDC is the IRF140=
4
> <http://www.datasheetcatalog.org/datasheet/irf/irf1404.pdf>
>
>
> 73, Stefan/DK7FC
>
> Am 22.02.2011 18:48, schrieb kd4wov@earthlink.net:
> > Could these help in getting the efficiencies higher in LF amps?
> >
> > Granted, these are low power devices. Looks like they are on the=
 right
track.
> >
> >
> >
> >
http://electronicdesign.com/article/power/Power-MOSFET-Knock-Efficienc=
y-Up-A-Notch-.aspx?cid=3Ded_productsnewsletter&NL=3D1&YM_RID=3Dkd4wov@=
earthlink.net
> >
> > Sent via BlackBerry by AT&T
> >
>